欧美日一区二区三区精品,欧美区一区视频在线观看,国产精品黄色av,亚洲av色香蕉一区二区,色七七日本亚洲综合视频,免费在线观看国产一区二区三区

優(yōu)惠活動(dòng) - 12周年慶本月新客福利
優(yōu)惠活動(dòng) - 12周年慶本月新客福利
優(yōu)惠活動(dòng) - 12周年慶本月新客福利

Shanghai QinSemi Technology Co., Ltd與我司簽訂網(wǎng)站建設(shè)協(xié)議

日期 : 2023-09-10 18:03:41
As one of the building blocks of “more-than-Moore” era, compound semiconductor e.g. III-V or II-VI materials play a very critical role as substrate materials of electronic/electric chips. Compared with traditional silicon substrates, these compound semiconductor materials hold special physical and chemical properties such as large bandgap, high carrier mobility, resistivity to radiation, optical transparency et al. Many innovative structures and chip designs take those advantages to realize miniaturization, low cost and high performance, which makes a business success possible. A good example is the electric vehicles (EV) equipped with a bunch of high-voltage chips made of silicon carbide (SiC) substrates, high-speed re-chargers are also taking benefits from the SiC chips. In the era of “post-Moore”, technology development of compound semiconductors triggers more commercial attempts, furthermore their business success or potentials motivate massive investment in developed economies. Rich investment results in the boost of markets and shorten lab2market period. This positive feedback could easily be observed in China. The high demand and technical requirement from downstream customers promote mass production of high-quality compound semiconductor substrates and wafers, with fast iterations of technology improvement.


網(wǎng)站建設(shè)
相關(guān)文章
临城县| 依安县| 年辖:市辖区| 方城县| 葵青区| 右玉县| 尚义县| 张家港市| 九江市| 扎鲁特旗| 乌拉特中旗| 阳原县| 孙吴县| 皮山县| 正定县| 潮州市| 青田县| 临沂市| 湄潭县| 晋州市| 洞头县| 庆云县| 农安县| 东乡| 隆化县| 乌恰县| 水富县| 伊通| 铜川市| 翁源县| 禄劝| 历史| 正镶白旗| 旅游| 成武县| 贡山| 广西| 哈巴河县| 乌拉特后旗| 长兴县| 洪洞县|